dmn63d1lw document number: ds 37576 rev. 2 - 2 1 of 6 www.diodes.com september 2015 ? diodes incorporated new product advanced information dmn63d1lw new product n - channel enhancement mode mosfet product summary v (br)dss r ds(on) max i d max t a = + 25 c 6 0v 2 ? @ v gs = 10 v 380 m a 3 ? @ v gs = 5v 31 0m a description this mosfet is designed to minimize the on - state resistance (r ds( on ) ) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. applications ? motor c ontrol ? power management functions ? backlighting features and benefits ? low on - resistance ? low input capacitance ? fast switching speed ? low input/output leakage ? esd protected gate ? totally lead - free & fully rohs c ompliant (note s 1 & 2 ) ? halogen and antimony free. green device (note 3 ) ? qualified to aec - q101 standards for high reliability mechanical data ? case: sot 3 23 ? case material: molded plastic, green mold ing compound. ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminals: finish ? matte tin a nnealed over alloy 42 l eadframe. solderable per mil - std - 202, method 208 ? weight: 0. 00 6 grams ( a pproximate) ordering information (note 4 ) part number case packaging dmn63d1l w - 7 sot 3 23 3000/tape & reel dmn63d1l w - 13 sot 3 23 100 00/tape & reel note s: 1 . no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and antimony - free "green products are defined as those which contain <900ppm bromine, <900ppm chlorine (< 1500ppm total br + cl) and <1000ppm antimony compounds. 4. for packaging det ails, go to our website at http://www.diodes.com/products/packages.html . marking information date code key year 2014 2015 2016 2017 201 8 201 9 202 0 20 21 20 22 20 23 20 24 20 25 code b c d e f g h i j k l m month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d sot 3 23 t op view esd p rotected gate t op view equivalent circuit d36 = product type marking code ym = date code marking y or y = year (ex: b = 20 14 ) m = month (ex: 9 = september) d g s e3 d s g g ate protection diode d36 y m
dmn63d1lw document number: ds 37576 rev. 2 - 2 2 of 6 www.diodes.com september 2015 ? diodes incorporated new product advanced information dmn63d1lw new product maximum ratings ( @t a = + 25c , unless otherwise specified .) characteristic symbol value unit drain - source voltage v dss 60 v gate - source voltage v gss 20 v continuous drain current (note 6 ) v gs = 10 v steady state t a = + 25 c t a = + 70 c i d 380 300 m a t<5s t a = + 25 c t a = + 70 c i d 430 340 m a maximum continuous body diode forward current (note 6 ) i s 0.5 a pulsed drain current (10 s p ulse, d uty c ycle = 1%) ( note 6 ) i dm 1.2 a thermal characteristics ( @t a = +25c, unless otherwise specified.) characteristic symbol value unit total power dissipation (note 5 ) p d 3 10 m w thermal resistance, junction to ambient (note 5 ) steady state r ja 411 c/w t<5 s 371 total power dissipation (note 6 ) p d 41 0 m w thermal resistance, junction to ambient (note 6 ) steady state r ja 311 c/w t<5 s 257 operating and storage temperature range t j, t stg - 55 to + 15 0 c electrical characteristics ( @t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 7 ) drain - source breakdown voltage bv dss 60 gs = 0v, i d = 10 a zero gate voltage drain current i dss ds = 60v, v gs = 0v gate - source leakage i gss gs = 20v, v ds = 0v on characteristics (note 7 ) gate threshold voltage v gs (th) 1.0 1.6 2.5 v v ds = 10v, i d = 1ma static drain - source on - resistance r ds(on) gs = 10v, i d = 0.5a v gs = 5v, i d = 0.05a forward transfer admittance |y fs | 80 ds = 10v, i d = 0.2a diode forward voltage v sd gs = 0v, i s = 115ma dynamic characteristics (note 8 ) input capacitance c iss ds = 25v, v gs = 0v f = 1.0mhz output capacitance c oss rss g gs = 0v, v ds = 0v total gate charge q g gs = 4.5 v, v ds = 10 v, i d = 250m a gate - source charge q gs gd d( on ) dd = 30 v, v gs = 10 v, r g = 25 d = 200ma turn - on rise time t r d( off ) f notes: 5 . device mounted on fr - 4 pcb, with minimum recommended pad layout . 6 . device mounted on 1 x 1 fr - 4 pcb with high coverage 2oz. copper, single sided . 7 . short duration pulse test used to minimize self - heating effect. 8 . guaranteed by design. not subject to product testing.
dmn63d1lw document number: ds 37576 rev. 2 - 2 3 of 6 www.diodes.com september 2015 ? diodes incorporated new product advanced information dmn63d1lw new product 0 1 2 3 4 5 0.001 0.01 0.1 1 r ds(on) , static drain - source on - state resistance ( ? ) i d , drain - source current (a) figure 6. static drain - source on - resistance vs. drain current v gs = 5.0v t a = - 55 o c t a = 25 o c t a = 85 o c t a = 125 o c t a = 150 o c 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1 2 3 4 5 i d , drain current (a) v ds , drain - source voltage (v) figure 1. typical output characteristic v gs = 3.0v v gs = 4.0v v gs = 5.0v v gs = 6.0v v gs = 8.0v v gs = 10.0v 0 0.5 1 1.5 2 2.5 - 50 - 25 0 25 50 75 100 125 150 r ds(on) , static drain - source, on - resistance ( ? j , junction temperature ( gs = 10.0v, i d = 300ma v gs = 10.0v, i d = 150ma 0 0.4 0.8 1.2 1.6 2 - 50 - 25 0 25 50 75 100 125 150 v gs(th) , gate threshold voltage (v) t j , junction temperature ( d = 250 a 0 0.4 0.8 1.2 1.6 2 - 50 - 25 0 25 50 75 100 125 150 v gs(th) , gate threshold voltage (v) t j , junction temperature ( d = 1ma 0.001 0.01 0.1 1 1 1.5 2 2.5 3 3.5 4 4.5 5 i d , drain current (a) v gs , gate source voltage (v) figure 5. typical transfer characteristics v ds = 10.0v t a = 125 o c t a = 150 o c t a = 85 o c t a = 25 o c t a = - 55 o c
dmn63d1lw document number: ds 37576 rev. 2 - 2 4 of 6 www.diodes.com september 2015 ? diodes incorporated new product advanced information dmn63d1lw new product 0 1 2 3 4 5 0.001 0.01 0.1 1 r ds(on) , s tatic drain - source on - state resistance ( ? ) i d , drain - source current (a) figure 7. static drain - source on - resistance vs. drain current v gs = 10.0v t a = 150 o c t a = 125 o c t a = 85 o c t a = 25 o c t a = - 55 o c 1 1.2 1.4 1.6 1.8 2 2 3 4 5 6 7 8 9 10 r ds(on) , static drain - source, on - resistance ( ? gs , gate - source voltage (v) figure 8. static drain - source on - resistance vs. gate - source voltage t j = 25 d = 300ma i d = 150ma 0.001 0.01 0.1 1 0 0.5 1 1.5 i dr , reverse drain current (a) v sd , source - drain voltage (v) figure 9. reverse drain current t j = 150 o c t j = 125 o c t j = 85 o c t j = 25 o c t j = - 55 o c v gs = 0v 0 5 10 15 20 25 30 35 40 45 50 0 5 10 15 20 25 30 c t , junction capacitance (pf) v ds , drain - source voltage (v) figure 10. typical junction capacitance f=1mhz c iss c oss c rss 0.001 0.01 0.1 1 10 0.1 1 10 100 i d , drain current (a) v ds , drain - source voltage (v) figure 11. soa, safe operation area t j(max) =150 t a =25 single pulse dut on 1*mrp board v gs =10v r ds(on) limited p w =10s dc p w =1s p w =100ms p w =10ms p w =1ms p w =100 s
dmn63d1lw document number: ds 37576 rev. 2 - 2 5 of 6 www.diodes.com september 2015 ? diodes incorporated new product advanced information dmn63d1lw new product package outline dimensions please see ap02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. sot323 dim min max typ a1 0.00 0.10 0.05 a2 0.90 1.00 0.95 b 0.25 0.40 0.30 c 0.10 0.18 0.11 d 1.80 2.20 2.15 e 2.00 2.20 2.10 e1 1.15 1.35 1.30 e 0.650 bsc e1 1.20 1.40 1.30 f 0.375 0.475 0.425 l 0.25 0.40 0.30 a 8 all dimensions in mm 0.001 0.01 0.1 1 1e - 06 1e - 05 0.0001 0.001 0.01 0.1 1 10 100 1000 r(t), transient thermal resistance t1, pulse duration time (sec) figure 12. transient thermal resistance d=0.9 d=0.7 d=0.5 d=0.3 d=0.1 d=0.05 d=0.02 d=0.01 d=0.005 d=single pulse r ja (t)=r(t) * r ja r ja =408 c /w duty cycle, d=t1 / t2 a e1 e f e1 b l c e a2 a1 d
dmn63d1lw document number: ds 37576 rev. 2 - 2 6 of 6 www.diodes.com september 2015 ? diodes incorporated new product advanced information dmn63d1lw new product suggested pad layout please see ap02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version . important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other c hanges without further notice to this document and any product described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorporated do es not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemni fy and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized applicat ion. products described herein may be covered by one or more united states, international or foreign patents pending. product nam es and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this doc ument is written in english but may be translated into multiple languages for reference. only the english version of this do cument is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or s ystems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in signific ant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related requirem ents concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. furthe r, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 201 5 , diodes incorporated w ww.diodes.com dimensions value (in mm) c 0.650 g 1.300 x 0.470 y 0.600 y1 2.500 y1 g y x c
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